SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE

摘要

A semiconductor device comprising a thin-film transistor (125) and a thin-film diode (126).  A semiconductor layer (108) of the thin-film transistor (125) and a semiconductor layer (109) of the thin-film diode (126) are crystalline semiconductor layers formed by crystallizing a same crystalline semiconductor film.  The surface of the semiconductor layer (109) of the thin-film diode (126) is provided with a ridge.  The surface roughness of the semiconductor layer (109) of the thin-film diode (126) is larger than the surface roughness of the semiconductor layer (108) of the thin-film transistor (125).