MANUFACTURING METHOD FOR NITRIDE BASED HETERO-JUNCTION FEILD EFFECT TRANSISTOR

摘要

PURPOSE: A method for manufacturing a nitride based hetero-junction field effect transistor is provided to improve the reliability by obtaining the high resistance value. CONSTITUTION: A buffer layer is formed on the upper side of a substrate(S110). A first gallium nitride layer is grown on the upper side of the buffer layer(S120). Ion is implanted into a grown first gallium nitride layer with an ion-implantation method. An annealing process is performed for the ion-implanted first gallium nitride layer(S130). A channel layer is formed on the upper side of the first gallium nitride layer(S140).