发明名称 |
Feldeffekttransistoren mit vertikal ausgerichteten Gate-Elektroden und Verfahren zum Herstellen derselben |
摘要 |
In semiconductor devices, and methods of formation thereof, both planar-type memory devices and vertically oriented thin body devices are formed on a common semiconductor layer. In a memory device, for example, it is desirable to have planar-type transistors in a peripheral region of the device, and vertically oriented thin body transistor devices in a cell region of the device. In this manner, the advantageous characteristics of each type of device can be applied to appropriate functions of the memory device. |
申请公布号 |
DE102006016550(B4) |
申请公布日期 |
2010.04.29 |
申请号 |
DE20061016550 |
申请日期 |
2006.04.07 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KIM, SUNG-MIN;PARK, DONG-GUN;KIM, DONG-WON;KIM, MIN-SANG;YUN, EUN-JUNG |
分类号 |
H01L27/085;H01L21/8234;H01L21/8247;H01L27/108;H01L27/12 |
主分类号 |
H01L27/085 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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