发明名称 A semiconductor device and method of manufacturing a semiconductor device
摘要 <p>A semiconductor structure with a waveguide, the semiconductor structure has a plurality of layers, at least one of which being partially laterally oxidised, said laterally oxidised material modifying the lateral effective refractive index with said structure in order to form a waveguide within the structure, the structure also has a quantum dot, said quantum dot being configured to emit photons into said waveguide, the waveguide being configured such that it guides the output from a single quantum dot.</p>
申请公布号 GB201004164(D0) 申请公布日期 2010.04.28
申请号 GB20100004164 申请日期 2010.03.12
申请人 TOSHIBA RESEARCH EUROPE LIMITED 发明人
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