METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CVD OR ALD USING IRON, RUTHENIUM OR OSMIUM CYCLOPENTADIENE CARBON MONOXIDE COMPLEXES

摘要

Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.