| 摘要 |
A method of monitoring, in real time, the depth to which a process sample is etched by an etching procedure involving investigating a sample substrate that has a patterned surface which, when electromagnetic radiation in an appropriate wavelength range is caused to reflect from, demonstrates lateral interference effects, such that when a frequency transform is applied to spectroscopic reflection data, three distinguishable peaks occur, at least for some range of pattern depth in the sample surface.
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