发明名称 Method for producing semiconductor device
摘要 A method for producing a semiconductor device includes bonding a transfer layer disposed on a first substrate to a second substrate and detaching the transfer layer from the first substrate. In bonding the transfer layer disposed on the first substrate to the second substrate, the method further includes placing a seal having a frame shape on a surface of the first substrate on which the transfer layer is disposed or a surface of the second substrate facing the first substrate, placing an adhesive in a region inside the seal, and superposing the surface of the first substrate on which the transfer layer is disposed on the second substrate with the seal and the adhesive. The seal and the adhesive are incompatible with each other. The seal and the adhesive are not cured in the period from placing the seal to superposing the surface of the first substrate on which the transfer layer is disposed on the second substrate.
申请公布号 US7704777(B2) 申请公布日期 2010.04.27
申请号 US20080971346 申请日期 2008.01.09
申请人 SEIKO EPSON CORPORATION 发明人 KAMINE TETSUJI
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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