RESISTANCE VARIABLE MEMORY DEVICE PROGRAMMING MULTI-BIT

摘要

PURPOSE: A resistance variable memory device is provided to reduce program time by simultaneously programming a multi-bit. CONSTITUTION: A memory cell array(110) stores a multi-bit. A control buffer circuit(180) stores a least significant bit and a most significant bit among the multi-bit, respectively. A write driver applies a program current in the memory cell array. A control logic(170) controls the write driver in order to program multi-bit at the same time during a program operation. The control buffer circuit comprises a LSB register storing the least significant bit and a MSB register storing the most significant bit.