发明名称 Internal voltage generator
摘要 An internal voltage generation device includes a plurality of output nodes; a bit line precharge voltage generation unit for generating a bit line precharge voltage; a first voltage drop unit for transferring the bit line precharge voltage to a first output node after decreasing the bit line precharge voltage by a first voltage drop amount in response to a test mode signal; and a second voltage drop unit for transferring the bit line precharge voltage to a second output node after decreasing the bit line precharge voltage by a second voltage drop amount in response to the test mode signal, wherein the second voltage drop amount is greater than the first voltage drop amount.
申请公布号 US7706200(B2) 申请公布日期 2010.04.27
申请号 US20090357641 申请日期 2009.01.22
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 CHI SUNG-SOO
分类号 G11C7/00;G11C7/06;G11C7/08;G11C7/12 主分类号 G11C7/00
代理机构 代理人
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