发明名称 |
Internal voltage generator |
摘要 |
An internal voltage generation device includes a plurality of output nodes; a bit line precharge voltage generation unit for generating a bit line precharge voltage; a first voltage drop unit for transferring the bit line precharge voltage to a first output node after decreasing the bit line precharge voltage by a first voltage drop amount in response to a test mode signal; and a second voltage drop unit for transferring the bit line precharge voltage to a second output node after decreasing the bit line precharge voltage by a second voltage drop amount in response to the test mode signal, wherein the second voltage drop amount is greater than the first voltage drop amount.
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申请公布号 |
US7706200(B2) |
申请公布日期 |
2010.04.27 |
申请号 |
US20090357641 |
申请日期 |
2009.01.22 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
CHI SUNG-SOO |
分类号 |
G11C7/00;G11C7/06;G11C7/08;G11C7/12 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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