发明名称 Photoelectric conversion device and manufacturing method thereof
摘要 It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
申请公布号 US7705283(B2) 申请公布日期 2010.04.27
申请号 US20060436086 申请日期 2006.05.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD 发明人 ARAO TATSUYA;HIROSE ATSUSHI;NISHI KAZUO;SUGAWARA YUUSUKE
分类号 G01J1/44;G01R19/00;H01L31/00;H01L31/112;H03F3/08;H04N3/14 主分类号 G01J1/44
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