| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with high light extraction efficiency, less threading dislocation existing in a compound semiconductor layer, which grows on a sapphire substrate, and less anisotropy in an orientation characteristic. <P>SOLUTION: A plurality of projections 2 are formed by random arrangement on the surface of the sapphire substrate 1, and a GaN layer 10 is made to grow on the surface. A multiple quantum well layer 12, a p-AlGaN layer 14, a p-GaN layer 16, and an ITO layer 18 are formed on the GaN layer 10. Two electrodes 21, 22 are also formed, so as to produce a semiconductor light emitting element. <P>COPYRIGHT: (C)2010,JPO&INPIT |
