发明名称 |
Cell structure for a semiconductor memory device and method of fabricating the same |
摘要 |
In a 6F2 cell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions and a second area at a central portion. A portion of a bit-line contact pad may be positioned on the second area and the other portion may be positioned on a third area of the substrate that may not overlap with the plurality of active regions. The bit line may be connected with the bit-line contact pad at the third area. The cell structure may be more easily formed despite a 6F2-structured unit cell. The plurality of active regions may have an elliptical shape including major and minor axes. The plurality of active regions may be positioned in a major axis direction to thereby form an active row, and may be positioned in a minor axis direction in such a structure that a center of the plurality of active regions is shifted from that of an adjacent active region in a neighboring active row.
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申请公布号 |
US2010096681(A1) |
申请公布日期 |
2010.04.22 |
申请号 |
US20090654255 |
申请日期 |
2009.12.15 |
申请人 |
BAEK KYOUNG-YUN;KO YONG-SUN;KIM HAK;BAE YONG-KUG |
发明人 |
BAEK KYOUNG-YUN;KO YONG-SUN;KIM HAK;BAE YONG-KUG |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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