SPUTTERING APPARATUS, METHOD FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR

摘要

Disclosed is a sputtering apparatus which can reduce damage on a base layer.  Also disclosed are a method for forming a thin film and a method for manufacturing a field effect transistor. An embodiment of the sputtering apparatus is a sputtering apparatus for forming a thin film on a surface to be processed of a substrate (10).  The sputtering apparatus comprises a vacuum chamber (61), a supporting member (93), a target (80) and a magnet (83).  The magnet (83) generates a plasma forming a to-be-sputtered region (80a) and moves the to-be-sputtered region (80a) between a first position where the to-be-sputtered region (80a) does not face the surface to be processed and a second position where the to-be-sputtered region (80a) faces the surface to be processed.  Consequently, the incident energy of sputtering particles, which are incident upon the surface to be processed of the substrate (10) from the to-be-sputtered region (80a), is decreased, thereby enabling protection of a base layer.