发明名称 |
GAN LIGHT-EMITTING DIODE WITH MONOLITHICALLY INTEGRATED PHOTONIC CRYSTALS AND ANGLED SIDEWALL DEFLECTORS AND METHOD OF THEREOF |
摘要 |
PURPOSE: A light emitting diode(LED) and a method for manufacturing the same are provided to obtain a blue LED structure with high light extracting efficiency by simultaneously inserting a micrometer size inclined sidewall deflector and nanometer size photonic crystals to a GaN-based LED device. CONSTITUTION: A photonic crystal is integrated on the upper side of a support substrate using a laser holography method and a dry-etching method. A GaN-based epi layer is formed on the upper side of the support substrate. An inclined reflector is formed on the sidewall of the GaN-based epi layer by an inductively coupled plasma-reactive ion etching method. The angle of the inclined reflector is in a range of 20 to 40°. A protective layer is formed on the upper side of the GaN-based epi layer by passing through a reflow.
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申请公布号 |
KR20100041138(A) |
申请公布日期 |
2010.04.22 |
申请号 |
KR20080100173 |
申请日期 |
2008.10.13 |
申请人 |
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, HEON SU;LEE, JOON HEE |
分类号 |
H01L33/22;H01L33/16;H01L33/32 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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