发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME |
摘要 |
A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
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申请公布号 |
US2010097105(A1) |
申请公布日期 |
2010.04.22 |
申请号 |
US20070445390 |
申请日期 |
2007.11.20 |
申请人 |
MORITA TATSUO;YANAGIHARA MANABU;ISHIDA HIDETOSHI;UEMOTO YASUHIRO;UENO HIROAKI;TANAKA TSUYOSHI;UEDA DAISUKE |
发明人 |
MORITA TATSUO;YANAGIHARA MANABU;ISHIDA HIDETOSHI;UEMOTO YASUHIRO;UENO HIROAKI;TANAKA TSUYOSHI;UEDA DAISUKE |
分类号 |
H03B1/00;H01L29/20;H01L29/24;H01L29/772;H03K17/56 |
主分类号 |
H03B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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