| 摘要 |
<p>A semiconductor wafer is set on a laser irradiation device, and while being moved, the semiconductor wafer is irradiated with a laser beam. At this time, the laser beam emitted from the laser generator is focused by a condenser lens such that the convergence point (focal point) is at a position several 10s of µm deeper than the surface of the semiconductor wafer. Thus, the crystalline structure of the semiconductor wafer at said depth is modified, and a gettering sink is formed.</p> |
