| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering film deposition method which deposits a film covering a recessed part such as a hole and a trench and having the improved coverage properties and the flat surface. Ž<P>SOLUTION: High frequency power and direct voltage are applied to a metal target in a chamber 201 to generate plasma, and further, target particles are ionized to generate metal ions. A substrate 306 mounted on a stage holder 302 within the chamber 201 and having a recessed part at the surface is irradiated with the metal ions to deposit a thin film. In this case, sputtering film deposition is performed first under a pressure of 5 to 15 Pa to deposit a first layer, and sputtering film deposition is then performed under a pressure of 0.5 to 5 Pa to deposit a second layer on the first layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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