发明名称 |
Silicided nonvolatile memory and method of making same |
摘要 |
A memory device is formed on a semiconductor substrate. A select gate electrode and a control gate electrode are formed adjacent to one another. One of either the select gate electrode or the control gate electrodes is recessed with respect to the other. The recess allows for a manufacturable process with which to form silicided surfaces on both the select gate electrode and the control gate electrode.
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申请公布号 |
US7700439(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20060376410 |
申请日期 |
2006.03.15 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
PRINZ ERWIN J.;CHANG KO-MIN;STEIMLE ROBERT F. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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