发明名称 |
Method for fabricating multiple FETs of different types |
摘要 |
For fabricating multiple field effect transistors (FETs), a first conductive layer is deposited over first and second active regions of a semiconductor substrate. The first conductive layer is patterned over the second active region to form mold structures. Mask structures are formed between the mold structures. The second active region is patterned using the mask structures or using spacers formed at sidewalls of the mold structures to form multiple fins of a field effect transistor of a fin type. The first conductive layer is patterned over the first active region to form a gate of another field effect transistor of a different type.
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申请公布号 |
US7700445(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20070804875 |
申请日期 |
2007.05.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG SE-MYEONG;YOSHIDA MAKOTO;KAHNG JAE-ROK;LEE CHUL;KIM KEUN-NAM;SUNG HYUN-JU;KIM HUI-JUNG;JUNG KYOUNG-HO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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