| 摘要 |
PURPOSE: A complementary metal oxide semiconductor device and a method for manufacturing the same are provided to prevent the generation of latch-up by etching a substrate and subsequently embedding a conductive layer in the etched region. CONSTITUTION: A first conductive well(220) includes a first transistor and a first trench(T1). The first voltage is applied to the first transistor. The depth of the first trench is deeper than the source and the drain of the first transistor. A second conductive well(230) is formed in the first conductive well. The second conductive well includes a second transistor and a second trench(T2). A second voltage is applied to the second transistor. A first guard-ring electrode(240) is embedded in the first trench. A second guard-ring electrode(250) is embedded in the second trench. The first voltage and the second voltage are respectively applied to the first guard-ring electrode and the second guard-ring electrode.
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