发明名称 Determining one or more profile parameters of a photomask covered by a pellicle
摘要 Provided is a method of determining one or more profile parameters of a photomask covered with a pellicle, the method comprising developing an optical metrology model of a pellicle covering a photomask, developing an optical metrology model of the photomask, the photomask separated from the pellicle by a medium and having a structure, the structure having profile parameters, the optical metrology model of the photomask taking into account the optical effects on the illumination beam transmitted through the pellicle and diffracted by the photomask structure. The optical metrology model of the pellicle and the optical metrology model of the photomask structure are integrated and optimized. At least one profile parameters of the photomask structure is determined using the optimized integrated optical metrology model.
申请公布号 US7702471(B2) 申请公布日期 2010.04.20
申请号 US20070753496 申请日期 2007.05.24
申请人 TOKYO ELECTRON LIMITED 发明人 LI SHIFANG;YEDUR SANJAY
分类号 G06F19/00;G01B11/02;G01B13/00;G06F17/50 主分类号 G06F19/00
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