发明名称 Compound semiconductor device
摘要 A separation element formed of one of a conduction region and a metal layer is placed between two elements in proximity to each other. The separation element is connected to a high resistance element and to a direct current terminal pad. A connection route extending from the direct current terminal pad to the separation element is a route in which a potential does not vibrate with high frequency. This results in a placement of a high frequency GND potential between the two elements, at least one of which is subjected to transmitting the high frequency signals, whereby leak of the high frequency signals can be prevented between the two elements.
申请公布号 US7701032(B2) 申请公布日期 2010.04.20
申请号 US20060442600 申请日期 2006.05.30
申请人 SANYO ELECTRIC CO., LTD. 发明人 ASANO TETSURO;KUSAKA YUICHI;SAKAKIBARA MIKITO
分类号 H01L29/80 主分类号 H01L29/80
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