| 摘要 |
The inventive production method of a compound semiconductor light-emitting device (LED)s wafer comprises a step of forming a protective film on the top and/or bottom surface of a compound semiconductor LEDs wafer, where the devices being regularly and periodically arranged with separation zones being disposed; a step of forming separation grooves by means of laser processing in the separation zones of the surface on which the protective film is formed, while a gas is blown onto a laser-irradiated portion; and a step of removing at least a portion of the protective film, which steps are performed in the above sequence. |
