发明名称 |
Doping of semiconductor fin devices |
摘要 |
A semiconductor structure includes a plurality of semiconductor fins overlying an insulator layer, a gate dielectric overlying a portion of said semiconductor fin, and a gate electrode overlying the gate dielectric. Each of the semiconductor fins has a top surface, a first sidewall surface, and a second sidewall surface. Dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the first sidewall surface and the top surface. Further dopant ions are implanted with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surface.
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申请公布号 |
US7701008(B2) |
申请公布日期 |
2010.04.20 |
申请号 |
US20060446890 |
申请日期 |
2006.06.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEO YEE-CHIA;WANG PING-WEI;CHEN HAO-YU;YANG FU-LIANG;HU CHENMING |
分类号 |
H01L29/76;H01L21/265;H01L21/336;H01L29/786 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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