| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a storage node contact plug by forming a conductive layer for a storage node contact plug and subsequently insulating the conductive layer. CONSTITUTION: A first landing plug(112a) and a second landing plug(112b) are formed between operation gates(108) and passing gates(106). Bit-lines which contact to the first landing plug are formed. A conductive layer(118) is formed on the first landing plug on which bit lines are formed. The height of the conductive layer is identical to the height of the bit-lines. A first insulation layer is formed on the conductive layer and the bit- lines. The parts of the insulation layer and the conductive layer are anisotropically etched. The etched conductive layer is re-etched in order to the expose the first landing plug and the operation gates and form a T-shape storage node contact which contacts to the second landing plug.
|
