| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a power semiconductor element having high dynamic robust properties. <P>SOLUTION: A semiconductor base material has first and second surfaces and an edge. Also, the semiconductor base material has an inner region 111 and an edge region 112, which is adjacent to the inner region 111 and to the edge in the lateral direction of the semiconductor base-material. Furthermore, the semiconductor base material has a first-conductivity-type base region 25, which is disposed in at least one of the inner regions 111 and at least one of the edge regions 112. Moreover, the semiconductor base material has a body region 27, which is disposed adjacent to the base region 25, in a vertical direction of the semiconductor base material and whose conductivity-type is of a second type, i.e. complementary with respect to that of the first type. Furthermore, the semiconductor base material has a first-conductivity-type field stoppage region disposed adjacent to the base region. The field stoppage region has a first field stoppage region 23 containing a first dopant quantity, in the edge region 112 and has a second field stoppage region 24 containing a second dopant quantity, in the inner region. The first dopant quantity is made larger than the second dopant quantity. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
