| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the thickness of a semiconductor device, while suppressing warpage and turning-up. Ž<P>SOLUTION: A groove portion is formed in a dicing region of a semiconductor wafer, having a plurality of semiconductor devices formed on a surface via the dicing region, and a surface protective member comprising a plate material transmitting ultraviolet rays and an adhesion layer to be cured by irradiation with ultraviolet rays is stuck on the surface of the semiconductor wafer; and the semiconductor devices are reduced in thickness, by grinding the rear surface of the semiconductor wafer, the semiconductor devices are separated, and the surface protective member is also separated to form small members. After the semiconductor device having the small member stuck is fitted to a base, the plate material is irradiated with ultraviolet rays, to cure the adhesion layer, and the small member is peeled off the semiconductor device. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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