发明名称 |
USE OF HIGH-PURITY POLYCRYSTALLINE SILICON ROD AS FEED ROD IN MONOCRYSTALLINE SILICON ZONE MELTING PROCESS AND ITS MANUFACTURING METHOD |
摘要 |
<p>The present invention discloses a use of high-purity polycrystalline silicon rod as feed rod in monocrystalline silicon zone melting process and its manufacturing method. The high-purity silicon rod is pressed into silicon rod with a diameter of 20mm-30mm by isostatic pressing method using silicon powder with purity of 99.9999%-99.9999999999%. Silicon powder used for the feedstock silicon rod has a diameter of 0.1mm-100mm.The density of the feedstock rod is 1.60-2.29g/cm3, anti-pressure parameter thereof is 0.1-50MPa and the purity thereof is 99.9999%-99.9999999999%. The feedstock rod has uniform density, which manifests in that an amplitude of density difference is 0-18% between any two points on any cross section of the silicon bulk. The high-purity polycrystalline silicon rod is of excellent anti-pressure performance and can be directly used as monocrystallinel silicon feedstock rod in zone melting process.</p> |
申请公布号 |
WO2010040283(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
WO2009CN01229 |
申请日期 |
2009.11.05 |
申请人 |
JIANGXI SAI WEI LDK SOLAR HI-TECH CO., LTD.;WAN, YUEPENG;ZHANG, TAO |
发明人 |
WAN, YUEPENG;ZHANG, TAO |
分类号 |
C30B13/00;C01B33/037;C30B28/02;C30B29/06 |
主分类号 |
C30B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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