Provided is a CMOS RF IC comprises an inductor that is formed in the uppermost two or more metal layers among a plurality of metal layers; and a DC bias circuit that is formed in a metal layer provided at the bottom of the metal layers in which the inductor is formed.
申请公布号
US2010090752(A1)
申请公布日期
2010.04.15
申请号
US20080273719
申请日期
2008.11.19
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
KIM YU SIN;LEE CHANG SEOK;OH NAM JIN;SHINICHI IIZUKA
