发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND SEMICONDUCTOR NANOWIRE SENSOR DEVICE MANUFACTURED ACCORDING TO THE METHOD |
摘要 |
Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
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申请公布号 |
US2010090197(A1) |
申请公布日期 |
2010.04.15 |
申请号 |
US20090494846 |
申请日期 |
2009.06.30 |
申请人 |
ELECTONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
PARK CHAN-WOO;AHN CHANG-GEUN;YANG JONG-HEON;BAEK IN-BOK;AH CHIL-SEONG;KIM AN-SOON;KIM TAE-YOUB;SUNG GUN-YONG;PARK SEON-HEE |
分类号 |
H01L29/12;H01L21/335 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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