发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND SEMICONDUCTOR NANOWIRE SENSOR DEVICE MANUFACTURED ACCORDING TO THE METHOD
摘要 Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
申请公布号 US2010090197(A1) 申请公布日期 2010.04.15
申请号 US20090494846 申请日期 2009.06.30
申请人 ELECTONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 PARK CHAN-WOO;AHN CHANG-GEUN;YANG JONG-HEON;BAEK IN-BOK;AH CHIL-SEONG;KIM AN-SOON;KIM TAE-YOUB;SUNG GUN-YONG;PARK SEON-HEE
分类号 H01L29/12;H01L21/335 主分类号 H01L29/12
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