METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING PLASMA REACTOR PROCESSING SYSTEM

摘要

To enable change of a concentration of atmosphere in a process chamber and realize a plasma reaction process required for manufacturing a liquid crystal device and a semiconductor device with a high yield at a low cost. A new flow rate setting value given to a pressure control type flow rate adjusting device of each constituent gas is a value obtained by calculating back from the process gas concentration after an estimated change under the condition that the total flow rate value is identical before and after the concentration change. A pressure controller of an exhaust pipe is switched from a pressure setting mode to a valve open setting mode only for a predetermined small time from the modification start and receives a valve open setting value obtained experimentally so as to mitigate the pressure fluctuation immediately after the change.