发明名称 FILM DEPOSITION APPARATUS, SUBSTRATE PROCESS APPARATUS, AND TURNTABLE
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus wherein the generation of contamination is prevented. SOLUTION: In the film deposition apparatus for depositing a film on each substrate by carrying out a plurality of cycles of alternately supplying at least two kinds of reaction gases that react with each other to each substrate to produce a layer of a reaction product, the film deposition apparatus includes a turntable provided in a vacuum vessel, a plurality of substrate receiving portions that are provided in the turntable for placing a substrate on the same circumference of the turntable, a first reaction gas supplying portion, a second reaction gas supplying portion, a separation gas supplying portion, and an upper holding member and a lower holding member which can press the turntable so as to be held from the upper and lower portions in the periphery of the central part of the turntable, and the upper holding member is made of quartz or ceramic. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010084230(A) 申请公布日期 2010.04.15
申请号 JP20090181806 申请日期 2009.08.04
申请人 TOKYO ELECTRON LTD 发明人 KATO HISASHI;HONMA MANABU;HAISHI TOMOKI
分类号 C23C16/44;C23C16/455;H01L21/31 主分类号 C23C16/44
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