| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that reduces a voltage applied to an inter-poly insulating film by increasing a capacity coupling rate on an active area in a dummy cell region, and prevents wire breaking of a control gate caused by a hollow of the control gate on an element isolation region, and to provide a method of manufacturing the nonvolatile semiconductor storage device. SOLUTION: Outside a memory cell region 110 where line-and-space (L&S) periodicity of an active area D1 and an element isolation region D1S is disordered, active areas D2a and D2b wider than the active area D1, and an element isolation region D2S disposed between the active areas D2a and D2b are formed. An upper surface of the element isolation region D2S is formed lower than an upper surface of a floating gate 12B from an end of the floating gate 12B halfway to the width of the element isolation region D2S, and formed in level with the upper surface of the floating gate 12C from to halfway the end of the floating gate 12C. COPYRIGHT: (C)2010,JPO&INPIT |
