| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-reliability and stably manufacturable lead-frame-type substrate that is compatible with an increase in the number of electrodes of a semiconductor element while preventing the occurrence of air bubble mixture, a manufacturing method for the same, and a semiconductor device. <P>SOLUTION: The manufacturing method for the lead-frame-type substrate includes the following steps: a step in which a photoresist pattern is formed in order to form a semiconductor device mounting part, a connection terminal, and an external frame respectively on a face 1 of a metal plate and to form an external terminal connected with the connection terminal and an external frame respectively on a face 2 of the metal plate, and particularly, a pattern for the external terminal is formed so as to have one or more projecting shapes; a step in which each non-through-hole is formed at a metal plate exposed part of the face 2 by etching; a step in which a liquid premold-resin is coated in the direction of the protruding part from the external terminal so as to form a resin layer; and a step in which the mounting part, the connection terminal, and the first external frame are formed by etching of the face 1. <P>COPYRIGHT: (C)2010,JPO&INPIT |
