| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for forming a film, which is capable of forming a low-dielectric film showing high heat resistance, an insulating film obtained therefrom, and an electronic device having the insulating film. Ž<P>SOLUTION: The composition for forming the film comprises: a silicon compound (A) having a group containing a carbon-carbon unsaturated bond; and a compound having a cage-type silsesquioxane structure. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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