发明名称 |
PATTERN INSPECTING METHOD, ION IMPLANTATION CONTROL METHOD, AND ION IMPLANTATION SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide an inspecting method capable of appropriately inspecting an ion implantation pattern. SOLUTION: The pattern inspecting method includes: a film forming process of forming a film on a substrate; an ion implantation pattern forming process S12 of forming an ion implantation pattern on the film through an opening pattern formed on a stencil mask; and an optical inspecting process S13 of optically inspecting the ion implantation pattern based upon the opening pattern. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010087246(A) |
申请公布日期 |
2010.04.15 |
申请号 |
JP20080254747 |
申请日期 |
2008.09.30 |
申请人 |
TOPPAN PRINTING CO LTD;TOSHIBA CORP;ULVAC JAPAN LTD |
发明人 |
AIDA TAKENORI;TAMURA AKIRA;ITO KOJIRO;EGUCHI HIDEYUKI;YAMADA MASAAKI;TSUJI HITOSHI;URABE KOICHI;NISHIBASHI TSUTOMU;TONARI KAZUHIKO |
分类号 |
H01L21/265;H01J37/147;H01J37/317;H01L21/266 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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