发明名称 PATTERN INSPECTING METHOD, ION IMPLANTATION CONTROL METHOD, AND ION IMPLANTATION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide an inspecting method capable of appropriately inspecting an ion implantation pattern. SOLUTION: The pattern inspecting method includes: a film forming process of forming a film on a substrate; an ion implantation pattern forming process S12 of forming an ion implantation pattern on the film through an opening pattern formed on a stencil mask; and an optical inspecting process S13 of optically inspecting the ion implantation pattern based upon the opening pattern. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010087246(A) 申请公布日期 2010.04.15
申请号 JP20080254747 申请日期 2008.09.30
申请人 TOPPAN PRINTING CO LTD;TOSHIBA CORP;ULVAC JAPAN LTD 发明人 AIDA TAKENORI;TAMURA AKIRA;ITO KOJIRO;EGUCHI HIDEYUKI;YAMADA MASAAKI;TSUJI HITOSHI;URABE KOICHI;NISHIBASHI TSUTOMU;TONARI KAZUHIKO
分类号 H01L21/265;H01J37/147;H01J37/317;H01L21/266 主分类号 H01L21/265
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