GALLIUM NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME, GALLIUM NITRIDE LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD FOR PRODUCING GALLIUM NITRIDE LIGHT-EMITTING DIODE

摘要

Provided is a gallium nitride semiconductor light-emitting element having a structure with which it is possible to improve the degree of polarization.  A light-emitting diode (11a) comprises a semiconductor region (13), an InGaN layer (15), and an active layer (17).  The semiconductor region (13) has a primary surface (13a) displaying semipolarity and is formed from GaN or AlGaN.  The primary surface (13a) of the semiconductor region (13) is oblique by angle a with respect to a plane (Sc) orthogonal to a reference axis (Cx) in the [0001] axial direction at this primary face (13a).  The thickness (D13) of the semiconductor region (13) is greater than the thickness (DInGaN) of the InGaN layer (17), and the thickness (DInGaN) of the InGaN layer (15) is 150 nm or greater. The InGaN layer (15) is disposed directly on top of the primary surface (13a) of the semiconductor region (13) so as to come into contact with the primary surface (13a).  The active layer (17) is disposed on a primary surface (15a) of the InGaN layer (15) so as to come into contact with the primary surface (15a).  The active layer (17) contains an InGaN quantum well layer (21).