摘要 |
A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall. |
申请人 |
APPLIED MATERIALS, INC.;WHITE, JOHN M.;CHOI, SOO YOUNG;SORENSEN, CARL A.;KUDELA, JOZEF;BAEK, JONGHOON;CHEN, JRJYAN JERRY;MCPHERSON, STEPHEN;TINER, ROBIN L. |
发明人 |
WHITE, JOHN M.;CHOI, SOO YOUNG;SORENSEN, CARL A.;KUDELA, JOZEF;BAEK, JONGHOON;CHEN, JRJYAN JERRY;MCPHERSON, STEPHEN;TINER, ROBIN L. |