发明名称 SUBSTRATE FOR GROWING WURTZITE TYPE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE
摘要 A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer, wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation.
申请公布号 US2010092800(A1) 申请公布日期 2010.04.15
申请号 US20090571499 申请日期 2009.10.01
申请人 发明人 ITAGAKI NAHO;IWASAKI TATSUYA;HOSHINO KATSUYUKI
分类号 B32B9/04;C23C14/34 主分类号 B32B9/04
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