METHODS OF FORMING PATTERNS UTILIZING LITHOGRAPHY AND SPACERS
摘要
Some embodiments include methods of forming patterns. A first set of features is photolithographically formed over a substrate, and then a second set of features is photolithographically formed over the substrate. At least some of the features of said second set alternate with features of the first set. Spacer material is formed over and between the features of the first and second sets. The spacer material is anisotropically etched to form spacers along the features of the first and second sets. The features of the first and second sets are then removed to leave a pattern of the spacers over the substrate.
申请公布号
WO2010042289(A1)
申请公布日期
2010.04.15
申请号
WO2009US56496
申请日期
2009.09.10
申请人
MICRON TECHNOLOGY, INC.;NIROOMAND, ARDAVAN;SANDHU, GURTEJ, S.;KIEHLBAUCH, MARK;SILLS, SCOTT
发明人
NIROOMAND, ARDAVAN;SANDHU, GURTEJ, S.;KIEHLBAUCH, MARK;SILLS, SCOTT