发明名称 THREE-STATE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE MASK
摘要 PURPOSE: A three phase mask and a method for manufacturing a semiconductor device using the same are provided to prevent misalignment between a hole and a trench by forming the hole and the trench at the same time using one the three phase mask. CONSTITUTION: A first transmission unit(102) transmits light entirely. A second transmission unit(104,106) transmits a part of the light. A block unit(100) blocks the transmission of the light and surrounds the first and second transmission units. An insulation layer is formed on the upper side of the semiconductor substrate.
申请公布号 KR20100038600(A) 申请公布日期 2010.04.15
申请号 KR20080097634 申请日期 2008.10.06
申请人 DONGBU HITEK CO., LTD. 发明人 KANG, JAE HYUN
分类号 H01L21/027;H01L21/28 主分类号 H01L21/027
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