| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas introduction mechanism which can improve responsibility in the change of gases, and to provide a film deposition system using the same. SOLUTION: In the gas introduction mechanism 62 for introducing the two or more kinds of gases to be required into a treatment vessel 24 of a film deposition system 22 for subjecting a workpiece W to film deposition treatment, the mechanism includes: a gas introduction mechanism body 64 fitted to the treatment vessel 24; two or more gas chambers 66A to 66C provided on the gas introduction mechanism body 64 and connected to gas passages feeding the respective two or more kinds of gases; gas jet ports 68A to 68C respectively provided so as to communicate the respective gas chambers 66A to 68C with the inside of the treatment chamber 25; movable covers 70A to 70C provided at the insides of the respective gas chambers 66A to 66C and opening/closing the gas jet ports 68A to 68C; cover driving parts 72A to 72C driving the movable covers 70A to 70C; and a movable cover control part 74 controlling the cover driving parts 72A to 72C. In this way, responsibility in the change of gases is improved. COPYRIGHT: (C)2010,JPO&INPIT |
