发明名称 |
MANUFACTURING METHOD OF FUNCTIONAL DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a functional device superior in mass production without damage of the functional device at the time of manufacturing. SOLUTION: In the manufacturing method of the functional device 10 having a functional thin film 2 formed on one surface-side of a silicon substrate (substrate) 1 and a hollow 5 which spatially separates a part of the functional thin film 2 and the silicon substrate 1, a resist film 6 is formed by applying and curing a resist on the functional film 2 formed on one surface of a silicon wafer (wafer) 3 becoming a base of the silicon substrate 1. A part of the silicon wafer 3 is etched so as to form a plurality of hollows 5. A temporary fixing sheet 7 is stuck to the resist film 6 on the functional thin film 2 formed on the silicon wafer 3. The silicon wafer 3 is diced from a temporary fixing sheet 7. The temporary fixing sheet 7 is peeled and the resist film 6 is removed in the manufacturing method of the functional device. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010087281(A) |
申请公布日期 |
2010.04.15 |
申请号 |
JP20080255420 |
申请日期 |
2008.09.30 |
申请人 |
PANASONIC ELECTRIC WORKS CO LTD |
发明人 |
TSUJI KOJI;USHIYAMA NAOKI;HAGIWARA YOSUKE |
分类号 |
H01L21/301;B81C1/00 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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