发明名称 MANUFACTURING METHOD OF FUNCTIONAL DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a functional device superior in mass production without damage of the functional device at the time of manufacturing. SOLUTION: In the manufacturing method of the functional device 10 having a functional thin film 2 formed on one surface-side of a silicon substrate (substrate) 1 and a hollow 5 which spatially separates a part of the functional thin film 2 and the silicon substrate 1, a resist film 6 is formed by applying and curing a resist on the functional film 2 formed on one surface of a silicon wafer (wafer) 3 becoming a base of the silicon substrate 1. A part of the silicon wafer 3 is etched so as to form a plurality of hollows 5. A temporary fixing sheet 7 is stuck to the resist film 6 on the functional thin film 2 formed on the silicon wafer 3. The silicon wafer 3 is diced from a temporary fixing sheet 7. The temporary fixing sheet 7 is peeled and the resist film 6 is removed in the manufacturing method of the functional device. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010087281(A) 申请公布日期 2010.04.15
申请号 JP20080255420 申请日期 2008.09.30
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 TSUJI KOJI;USHIYAMA NAOKI;HAGIWARA YOSUKE
分类号 H01L21/301;B81C1/00 主分类号 H01L21/301
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