| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can form a trench structure without forming a micro trench on a surface of a substrate. Ž<P>SOLUTION: This method for manufacturing the semiconductor device performs the steps of: forming a trench reaching the inside of a silicon layer from a surface of a mask layer for the substrate having the silicon layer, an interlayer insulating film made of silicon oxide, and the mask layer; implanting charge particles into a wall face exposed into the trench of the interlayer insulating film; etching the interlayer insulating film from the wall face exposed into the trench; making wider a width of the trench in a range corresponding to the silicon layer than that of the trench at a lower end of the interlayer insulating film by etching; oxidizing a surface of the silicon layer exposed into the trench to form a trench insulating film; charging polysilicon into the trench; and oxidizing a surface of polysilicon to form a cap insulating film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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