| 摘要 |
An organic element is protected by a protection film, which has high sealing performance while relaxing a stress and does not change the characteristics of the organic element. In a substrate processing system (Sys), a substrate processing apparatus (10), which includes a deposition apparatus (PM1), a first microwave plasma processing apparatus (PM3) and a second microwave plasma processing apparatus (PM4), is arranged in a cluster structure, and an organic electronic device is manufactured by keeping a space where a substrate (G) moves from an area where the substrate (G) is carried in to an area where the substrate is carried out in a desired depressurized state. An organic EL element is formed by the deposition apparatus (PM1), butyne gas is brought into the plasma state by microwave power by the first microwave plasma processing apparatus (PM3), and an aCHx film (54) is formed adjacent to the organic EL element to cover the organic EL element. Then, silane gas and nitrogen gas are brought into plasma state by microwave power by the second microwave plasma processing apparatus (PM4), and a SiNx film (55) is formed on the aCHx film (54). |
