| 摘要 |
<P>PROBLEM TO BE SOLVED: To inexpensively reduce the crystal defect density of a semiconductor thin film in growing the thin film on a substrate, and to easily separate a grown semiconductor thin film from the substrate with high reproducibility even when the thin film has a large area. <P>SOLUTION: A substrate 11 on which a second semiconductor layer 14 and a second mask film 24 are formed is subjected to heat treatment in an oxidizing atmosphere. Consequently, the areas not covered with the second mask film 24 of the semiconductor layer 14 are oxidized and second oxidized areas 14C are formed. In addition, second base layers 14a are formed in areas sandwiched among the second oxidized areas 14c. Successively, the second mask film 24 is removed and a third semiconductor layer 16 is selectively grown on the exposed surfaces of the second base layers 14a exposed among the second oxidized areas 14C so as to cover the areas 14c. In addition, a first oxidized area 12B covering the whole surface of the substrate 11 and the second oxidized areas 14c are removed. <P>COPYRIGHT: (C)2004,JPO |
