发明名称 |
TEST STRUCTURE, TEST STRUCTURE FORMATION AND MASK REUSE IN SEMICONDUCTOR PROCESSING |
摘要 |
<p>Different types of test structures are formed during semiconductor processing with a mask that is reused to form the same pattern in multiple layers. Reference marks that allow alignment accuracy to be checked are also formed with the mask. One type of test structure comprises features that are aligned with one another and that are formed from different layers. Other types of test structures comprise features formed from respective layers that are not aligned with other test structure features. The different types of test structures are formed with a single mask that is used in a manner that also allows alignment marks to be formed which do not interfere with one another as subsequent layers are patterned. The different types of test structures can provide insight into performance characteristics of different types of devices as the semiconductor process proceeds.</p> |
申请公布号 |
KR20100038319(A) |
申请公布日期 |
2010.04.14 |
申请号 |
KR20097027314 |
申请日期 |
2008.06.26 |
申请人 |
SANDISK 3D LLC |
发明人 |
LI CALVIN K.;CHEN YUNG TIN;CHEN EN SHING;POON PAUL WAI KIE |
分类号 |
H01L21/027;G01R31/28;H01L21/66 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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