| 摘要 |
A method of fabricating a Complementary Metal-Oxide Semiconductor (CMOS) Thin Film Transistor (TFT) using a reduced number of masks includes: forming a buffer layer on the entire surface of a substrate; forming polysilicon and photoresist layers on the entire surface of the substrate having the buffer layer; exposing and developing the photoresist layer to form a first photoresist pattern having a first thickness in a region where a semiconductor layer of a first TFT is to be formed, a second thickness in a region where a channel and a Lightly Doped Drain (LDD) region of a second TFT are to be formed, and a third thickness in a region where source and drain regions of the second TFT are to be formed; etching the polysilicon layer using the first photoresist pattern as a mask to pattern the semiconductor layers of the first and second TFTs; performing a first ashing process on the first photoresist pattern to form a second photoresist pattern where the region having the third thickness has been removed from the first photoresist pattern; implanting a first impurity into the source and drain regions of the second TFT using the second photoresist pattern as a mask; performing a second ashing process on the second photoresist pattern to form a third photoresist pattern where the region having the second thickness has been removed from the first photoresist pattern; and implanting a second impurity into the second TFT using the third photoresist pattern as a mask to perform channel doping on the second TFT.
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