发明名称 |
METHOD FOR FORMING DEEP WELL OF POWER DEVICE |
摘要 |
The invention provides a method for forming a deep well region of a power device, including: providing a substrate with a first sacrificial layer thereon; forming a first patterned mask layer on the first sacrificial layer exposing a first open region; performing a first doping process to the first open region to form a first sub-doped region; removing the first patterned mask layer and the first sacrificial layer; forming an epitaxial layer on the substrate; forming a second sacrificial layer on the epitaxial layer; forming a second patterned mask layer on the second sacrificial layer exposing a second open region; performing a second doping process to the second open region to form a second sub-doped region; removing the second patterned mask layer; performing an annealing process to make the first and the second sub-doped regions form a deep well region; and removing the second sacrificial layer.
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申请公布号 |
US2010087054(A1) |
申请公布日期 |
2010.04.08 |
申请号 |
US20080323411 |
申请日期 |
2008.11.25 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
TU SHANGHUI L.;TSAI HUNG-SHERN;CHANG JUI-CHUN |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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