| 摘要 |
<p>A rinse solution for removing thick film resist includes dimethylsulfoxide, potassium hydroxide, alcohol amine, aromatic alcohol, corrosion inhibitor of polyacrylic acid series and condensation. The rinse solution may be used in a large scope of temperature(45~90?). The rinse solution for removing resist may clean thick resist and other residues on a metal, metal alloy or dielectric substrate, especially clean more 100µm thickness highly crosslinked negative resist. Meanwhile the rinse solution has low etch rate for metals such as Al and Cu, and nonmetals such as SiO2 with no damage to the wafer pattern and the substrate. And the rinse solution can be used in micro electronic field for the cleaning of semiconductor wafer.</p> |
